Application of Improved Genetic Algorithm in Path Planning of Step DMD Digital Mask Lithography

Abstract

This paper proposes an improved genetic algorithm for path planning of DMD digital mask lithography. Firstly, the traditional genetic algorithm is used to plan the lithographic path, and the relationship between the total area ratio of the lithographic pattern and the path optimization ratio is obtained to determine the effectiveness of the genetic algorithm. Secondly, the self-adjusting strategy of crossover and mutation operators is improved to improve the convergence speed of the algorithm. Finally, taking PCB production as an example, the effectiveness of the algorithm is verified. For the exposure area of 40 × 60 mm, after 4000 generations of iteration of genetic algorithm, the projection path is shortened from 1238 mm to 720 mm, and the path optimization before and after planning is 41.8%. This method plays a positive role in the application of DMD to large area graphics transfer in PCB production. At the same time, the method can be widely used in MEMS production, micro optical device processing, 3D micro nano structure, integrated circuit production and other scenes with large area blank of substrate graphics.