INTEGRATION OF THREE-DIMENSIONAL NAND MEMORY DEVICES WITH MULTIPLE FUNCTIONAL CHIPS
Patent №
US 11,031,377
Granted
2021-06-08
Filed 2019
Owner
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
16521214
Embodiments of three-dimensional semiconductor devices and fabrication methods are disclosed. The method includes forming a first and a second memory chips and a microprocessor chip. The method also includes bonding a first interconnect layer of the first memory chip with a second interconnect layer of the second memory chip, such that one or more first memory cells of the first memory chip are electrically connected with one or more second memory cells of the second memory chip through interconnect structures of the first and second interconnect layers. The method further includes bonding a third interconnect layer of the microprocessor chip with a substrate of the second memory chip, such that the one or more microprocessor devices of the microprocessor chip are electrically connected with one or more second memory cell of the second memory chip through interconnect structures of the second and third interconnect layers.
AI classification
Ownership
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
assignment · 503240730
Assignors
LIU, JUN
On an employer assignment, the assignors are typically the inventors.