METHOD OF VERIFYING ERROR OF OPTICAL PROXIMITY CORRECTION MODEL

A method of fabricating a semiconductor device includes generating a mask based on second layout data obtained by applying an OPC model to first layout data and performing a semiconductor process using the mask on a substrate, obtaining a plurality of pattern images by selecting a plurality of sample patterns from the substrate, selecting sample images corresponding to the sample patterns from each of the first layout data, the second layout data, and simulation data obtained by performing a simulation based on the second layout data, generating a plurality of input images corresponding to the sample patterns by blending the sample images corresponding to the sample patterns, respectively, and generating an error prediction model for the OPC model by training a machine learning model using a data set including the input images and the pattern images.