FABRICATION OF NORMAL CONDUCTING OR LOW-GAP ISLANDS FOR DOWNCONVERSION OF PAIR-BREAKING PHONONS IN SUPERCONDUCTING QUANTUM CIRCUITS

Patent №

US 12,414,483

Granted

2025-09-09

Filed 2021

Owner

Syracuse University

Lab

AI components

0

Assignment

None on record

Dataset

AIPD

Application

17469380

Disclosed herein is a quantum processor comprising a substrate, a qubit structure formed on the substrate, an electroplated phonon downconversion material, and furrows through the electroplated phonon downconversion material forming a plurality of electroplated phonon downconversion islands coupled to the substrate configured to channel deposited energy away from the qubit structure. Also disclosed are methods of making and using the same.

H10N 69/00G06N 10/40H10N 60/12H10N 60/0912H10N 60/815

Ownership

Syracuse University

© 2026 NYSGPT2525 LLC