Patent US 4,338,516

An optical temperature gauge using a semiconductor crystal (12) having a band-edge shift property which is temperature dependent. An external narrow band light source (10) provides optical excitation through an optical fiber (11) and light energy thus passed through the crystal (12) is conveyed by a second optical fiber (13) to a light-to-electric transducer (14) at an external location, the crystal (12) thereby being locatable in cryogenic or other systems, to provide remote read-out. The light wavelength is varied (scanned) in a repetitive pattern in source (10), the instantaneous wavelength passing over the band-edge wavelength during each cycle of the scan. The timing of the crossover is related to the temperature of the crystal by electronic means (15 and 17). Several alternative elements of instrumentation are disclosed. A variation in the basic measurement apparatus is also disclosed, in which the band gap voltage of a light source (10) such as a laser diode is evaluated at the time of band-edge crossover in the crystal (12) and converted to a temperature value.