DOUBLE LAMBDA DIODE MEMORY CELL

Patent №

US 4,376,986

Granted

1983-03-15

Filed 1981

Owner

BURROUGHS CORPORATION, A CORP. OF MICH.

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

06307158

Disclosed is an improved static memory cell comprised of first and second conductive means for carrying respective bias voltages in the cell, a third conductive means for carrying an input/output voltage signal in the cell, and a Lambda diode coupled between the first and third conductive means for there providing a negative dynamic resistance whenever the input/output voltage signal is within a predetermined range between the bias voltages on the first and second conductive means, with the improvement being a voltage dependent resistance means coupled between the second and third conductive means for there providing a negative dynamic resistance in response to at least some of the input/output voltages within said range.

AI hardwareG11C 11/39G11C 11/36

AI classification

AI hardware0.52
Machine learning0.01
Speech0.00
Natural language0.00
Vision0.00
Evolutionary computation0.00
Knowledge representation0.00
Planning0.00

Ownership

BURROUGHS CORPORATION, A CORP. OF MICH.

assignment · 39280261

Assignors

ELMASRY, MOHAMED I., PETERSON, LU VERNE R.

On an employer assignment, the assignors are typically the inventors.

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