INELASTIC TUNNEL DIODES

Patent №

US 4,482,779

Granted

1984-11-13

Filed 1983

Owner

UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

06486471

Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to mid-ultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes. Inelastic tunneling produces power by absorbing plasmons to pump electrons to higher potential. Specifically, an electron from a semiconductor layer absorbs a plasmon and simultaneously tunnels across an insulator into a metal layer which is at higher potential. The diode voltage determines the fraction of energy extracted from the plasmons; any excess is lost to heat.

AI hardwareH10F 10/12H10F 30/2275H10F 77/413Y02E 10/50

AI classification

AI hardware0.93
Natural language0.01
Vision0.00
Machine learning0.00
Speech0.00
Evolutionary computation0.00
Knowledge representation0.00
Planning0.00

Ownership

UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

assignment · 41190666

Assignors

ANDERSON, LYNN M.

On an employer assignment, the assignors are typically the inventors.

From the same owner

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