Patent US 4,528,062

A method of manufacturing a single crystal of a III-V compound by melting a charge of polycrystalline material and progressive crystallization of the molten stoichiometric compound in a closed space. The method is characterized in that on the one hand a certain quantity of the sparingly volatile element of the compound is added to the charge of polycrystalline material, which facilitates the melting of the material and on the other hand the corresponding quantity of the volatile element is added at the point of lower temperature of the space so that the stoichiometric ratios are observed.