CHARGE COUPLED DEVICE WITH REDUCED SURFACE STATE AT SEMICONDUCTOR INSULATER INTERFACE
Patent №
US 4,872,043
Granted
1989-10-03
Filed 1988
Owner
TEXAS INSTRUMENTS INCORPORATED, 13500 NORTH CENTRAL EXPRESSWAY, DALLAS, TX 75265, A CORP. OF DE
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
07240394
To reduce the dark current to be produced in a semiconductor charge-coupled device, the device is fabricated by preparing a layer of a doped semiconductor having an insulator layer thereon, forming a plurality of transfer electrodes on said insulator layer, and reducing the surface state at the interface between said semiconductor layer and said insulator layer at lease over its areas underlying the transfer electrodes.
AI classification
Ownership
TEXAS INSTRUMENTS INCORPORATED, 13500 NORTH CENTRAL EXPRESSWAY, DALLAS, TX 75265, A CORP. OF DE
assignment · 51400482
Assignors
TEXAS INSTRUMENTS JAPAN LTD., FUJII, ICHIRO
On an employer assignment, the assignors are typically the inventors.