MECHANICAL FIELD EFFECT TRANSISTOR SENSOR

A mechanical field effect transistor sensor which has a drain and a source on a semiconductor portion, and a moveable gate which causes conduction between the drain and source when the gate is in proximity or touching the semiconductor portion. The gate in its preferred embodiment comprises a cantilever microbeam which allows movement of the gate up or down with respect to the semiconductor portion when a force is applied to the microbeam. The microbeam can be replaced with a diaphragm or a simply supported beam. The gate is coupled to an external voltage source which supplies a voltage to the gate causing the conduction between drain and source. Another embodiment uses a piezoelectric material for the gate which generates a voltage when it is compressed or expanded due to forces caused by changes in acceleration and magnetic fields.