Patent №
US 5,115,300
Granted
1992-05-19
Filed 1990
Owner
KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN
Lab
—
AI components
1
vision
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
07622591
A high-power semiconductor device comprises a overcurrent detecting terminal. One of conductive layers selectively adhered to a substrate of the semiconductor device is thinner than the other conductive layers. One of terminals for an electrode of the semiconductor element of the high-power semiconductor device is connected to one end of the thinner conductive layer. The overcurrent detecting terminal is electrically connected to said electrode, and to the other end of the thinner conductive layer. A potential difference between the terminal and the overcurrent detecting terminal is measured, in order to detect a current, to prevent an overcurrent from flowing through the semiconductor element.
AI classification
Ownership
KABUSHIKI KAISHA TOSHIBA, A CORP. OF JAPAN
assignment · 55300529
Assignors
YANAGIDA, SHINGO, TSUNODA, TETSUJIRO
On an employer assignment, the assignors are typically the inventors.