CHARGE DOMAIN SYNAPSE CELL

Patent №

US 5,136,176

Granted

1992-08-04

Filed 1991

Owner

INTEL CORPORATION, A DE CORP.

Lab

AI components

2

ml · hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

07747640

A semiconductor charge domain synapse cell has a capacitor coupled between an input line and an intermediate node. A high-to-low voltage transition applied to the input line causes charge transfer from one summing line to the intermediate node through a first device having a programmable threshold. A second device then transfers the charge from the intermediate node to another summing line in response to the next low-to-high transition of the input. The amount of charge transferred is proportional the amplitude of the pulsed input, the programmed voltage threshold, and the capacitance value.

AI classification

AI hardware1.00
Machine learning1.00
Vision0.00
Natural language0.00
Evolutionary computation0.00
Planning0.00
Knowledge representation0.00
Speech0.00

Ownership

INTEL CORPORATION, A DE CORP.

assignment · 58200184

Assignors

CASTRO, HERNAN A.

On an employer assignment, the assignors are typically the inventors.

From the same owner

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