STANDARD-CELL TYPE SEMICONDUCTOR LOGIC LSI WITH LOGICAL AMPLITUDE ENHANCER

A standard cell type gallium arsenide logic integrated circuit device includes arrays of standard cells connected to each other on a chip substrate. Each of the standard cells includes a plurality of gallium arsenide logic gates of previously selected type such as NOR gates and an inverter. The logic gate has a direct-coupled type FET logic circuit structure. In each of the standard cells, level-shift circuits are provided only for inputs of those logic gates which are directly connected to connection terminals directly associated with the other standard cell. The level-shift circuits enhance the swing width of a logic signal transmitted between the standard cells which are associated with one another, thereby increasing the operation margin. Such a level-shift circuit is not provided for internal interconnection wirings between the logic gates inside the standard cell.