SEMICONDUCTOR GROWTH METHOD WITH THICKNESS CONTROL

Patent №

US 5,756,375

Granted

1998-05-26

Filed 1996

Owner

TEXAS INSTRUMENTS INCORPORATED

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

08664940

Molecular beam epitaxy (202) with growing layer thickness and doping control (206) by feedback of sensor signals such as spectrosceopic ellipsometer signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes and hetrojunction bipolar transistors with doped and undoped GaAs layers, AlGaAs and InGaAs.

AI hardwareB24B 37/013H01L 22/26H10P 74/238H01L 21/02392H01L 21/02463H01L 21/02546H10P 14/2909H10P 14/3221+1 more

AI classification

AI hardware0.97
Machine learning0.02
Speech0.00
Planning0.00
Natural language0.00
Evolutionary computation0.00
Knowledge representation0.00
Vision0.00

Ownership

TEXAS INSTRUMENTS INCORPORATED

assignment · 83930233

Assignors

CELII, FRANCIS G., KIM, TAE S., DUNCAN, WALTER M.

On an employer assignment, the assignors are typically the inventors.

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