Patent №
US 5,774,400
Granted
1998-06-30
Filed 1996
Owner
NVX CORPORATION
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
08772970
A method and structure for preventing over erasure in non-volatile memory cells uses simultaneous erase and program current injections which offset one another. These currents come from two separate injection points within the non-volatile memory transistor and are dominant at different points during the erase operation. The first occurring current erases the non-volatile device and the second prevents over erasure.
AI classification
Ownership
NVX CORPORATION
assignment · 83600785
Assignors
LANCASTER, LOREN T., HIROSE, RYAN T.
On an employer assignment, the assignors are typically the inventors.