METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH ADJUSTABLE THRESHOLD VOLTAGE

Patent №

US 5,963,824

Granted

1999-10-05

Filed 1997

Owner

ADVANCED MICRO DEVICES

+2 more

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

08891422

The present invention provides a method of making a semiconductor device with a channel length of approximately 0.05 microns. A method of producing a semiconductor device according to the present invention includes a control gate, a first floating gate located in proximity to the control gate, and a second floating gate located in proximity to the control gate. The present invention allows the threshold voltage of the device to be adjusted to various levels. Additionally, the device according to the present invention can be used as a very effective nonvolatile memory device.

AI hardwareG11C 16/0475G11C 11/5621G11C 11/5671G11C 16/0458H10D 30/0275H10D 30/0411H10D 30/60H10D 30/687+4 more

AI classification

AI hardware0.50
Vision0.01
Natural language0.01
Evolutionary computation0.00
Machine learning0.00
Speech0.00
Knowledge representation0.00
Planning0.00

Ownership

ADVANCED MICRO DEVICES

assignment · 86880186

SPANSION INC.

assignment · 190280617

CYPRESS SEMICONDUCTOR CORPORATION

assignment · 360190156

Assignors

KRIVOKAPIC, ZORAN

On an employer assignment, the assignors are typically the inventors.

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