ENHANCED SPIN-VALVE/GMR MAGNETIC SENSOR WITH AN INSULATINGBOUNDARY LAYER

Patent №

US 6,134,090

Granted

2000-10-17

Filed 1998

Owner

SEAGATE TECHNOLOGY, INC.

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

09153581

A spin valve sensor is constructed with an electrically conductive antiferromagnetic pinning layer. A first ferromagnetic layer is placed proximate the pinning layer. A second ferromagnetic layer is included with a non-ferromagnetic electrically conductive layer placed between the first and second ferromagnetic layers. A boundary layer of electrically insulating material is placed proximate to the second layer of ferromagnetic material opposite the non-ferromagnetic electrically conductive layer. Preferred embodiments exhibit an enhanced giant magnetoresistive (GMR) effect presumably due to scattering that is more specular at the interface with the electrically insulating material.

AI hardwareG11B 5/3903B82Y 10/00B82Y 25/00G01R 33/093G11B 2005/3996

AI classification

AI hardware0.60
Machine learning0.00
Speech0.00
Natural language0.00
Knowledge representation0.00
Evolutionary computation0.00
Vision0.00
Planning0.00

Ownership

SEAGATE TECHNOLOGY, INC.

assignment · 94660406

Assignors

MAO, SINING, MURDOCK, EDWARD S.

On an employer assignment, the assignors are typically the inventors.

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