SEMICONDUCTOR MEMORY DEVICE PREVENTED FROM DETERIORATION DUE TO ACTIVATED HYDROGEN

An alloy oxide film of platinum and rhodium is formed as an upper electrode so as to be put in direct contact with a ferroelectric PZT film. Asymmetry of a hysteresis loop characteristic of a dielectric material representing a correlation between a polarization value and an application electric field as well as a deterioration such as an increase in leak current density, when oxide electrode of IrO.sub.2, RuO.sub.2, RhO.sub.2 or the like is used, are improved.