METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICES

The resist to be used for the method of this invention in producing a semiconductor device is patterned by a procedure which comprises the steps of disposing in the direction of a semiconductor wafer a first mask having circuit patterns repeatedly formed at a plurality of positions, then shielding those of said plurality of circuit patterns which overlap the edge of the semiconductor wafer with a blind to an extent such that the remaining circuit patterns are not shielded, exposing a resist overlying the semiconductor wafer by using the first mask held in a state partially shielded by the blind, projecting light through a second mask provided with a light passing pattern defined by a shielding film to an area of the resist to which the edge of the blind is transferred, and developing the resist