INDEPENDENTLY PROGRAMMABLE MEMORY SEGMENTS WITHIN A PMOS ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY ARRAY ACHIEVED BY N-WELL SEPARATION AND METHOD THEREFOR

An array of P-channel memory cells is separated into independently programmable memory segments by creating multiple, electrically isolated N-wells upon which the memory segments are fabricated. The methods for creating the multiple, electrically isolated N-wells include p-n junction isolation and dielectric isolation.