Programming flash memory analog storage using coarse-and-fine sequence

The present invention is a method and apparatus to program a flash memory cell in an analog storage array. A read circuit reads a cell voltage of a flash memory cell. A comparator compares the read cell voltage with an input voltage representing an analog signal. The comparator generates first and second comparison results. A programming circuit generates a first program pulse corresponding to a first amplitude to iteratively program the flash memory cell based on the first comparison result. The programming circuit generates a second program pulse corresponding to a second amplitude less than the first amplitude to iteratively program the flash memory cell based on the first and second comparison results.