NON-VOLATILE ELECTRICALLY ERASABLE AND PROGRAMMABLE SEMICONDUCTOR MEMORY CELL UTILIZING ASYMMETRICAL CHARGE TRAPPING
Patent №
US 6,566,699
Granted
2003-05-20
Filed 2001
Owner
SAIFUN SEMICONDUCTORS LTD.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
09939570
A method of enhancing erasure of a cell having a non-conductive charge trapping layer, the cell having a gate generally over the charge trapping layer includes programming the cell to minimize the width of a trapping region within the charge trapping layer by reading with a minimum voltage on the gate in a direction opposite that of programming.
AI classification
AI hardware0.74
Natural language0.01
Evolutionary computation0.00
Vision0.00
Knowledge representation0.00
Machine learning0.00
Speech0.00
Planning0.00
Ownership
SAIFUN SEMICONDUCTORS LTD.
assignment · 139600723
Assignors
EITAN, BOAZ
On an employer assignment, the assignors are typically the inventors.
From the same owner
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