METHOD AND APPARATUS FOR BROADBAND OPTICAL END POINT DETERMINATION FOR IN-SITU FILM THICKNESS MEASUREMENT

A method for determining a film thickness in a semiconductor substrate is provided. The method initiates with providing multiple layers on the semiconductor substrate. Then, two reflectance spectra are generated where each of the two reflectance spectra are associated with different time periods while an upper layer is being removed. Next, a difference between the two reflectance spectra is calculated. Then, a curve is defined from the difference between the two reflectance spectra. Next, the defined curve is fitted by a known parametric function to determine the film thickness. An endpoint detector and a CMP system are also provided.