HIGH COHERENT POWER, TWO-DIMENSIONAL SURFACE-EMITTING SEMICONDUCTOR DIODE ARRAY LASER

Patent №

US 6,885,686

Granted

2005-04-26

Filed 2003

Owner

WISCONSIN ALUMNI RESEARCH FOUNDATION

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

10345613

A semiconductor laser is formed on a semiconductor substrate with an array of laterally spaced laser device elements each including a second order distributed feedback grating bounded by distributed Bragg reflector gratings and a central phase shift in the distributed feedback grating. The device elements in which the distributed feedback grating and the distributed Bragg reflector gratings are formed have a lower effective index than the index of the interelement regions and are spaced so as to form an antiguided array. A two-dimensional semiconductor array laser may be formed of four or more of the semiconductor array devices arranged on the substrate to provide long range coherent coupling via traveling waves of light between the device elements.

AI hardwareH01S 5/42B82Y 20/00H01S 5/125H01S 5/187H01S 5/026H01S 5/028H01S 5/1032H01S 5/1203+4 more

AI classification

AI hardware0.77
Vision0.02
Natural language0.00
Speech0.00
Planning0.00
Evolutionary computation0.00
Knowledge representation0.00
Machine learning0.00

Ownership

WISCONSIN ALUMNI RESEARCH FOUNDATION

assignment · 137040403

Assignors

BOTEZ, DAN

On an employer assignment, the assignors are typically the inventors.

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