APPARATUS AND METHOD FOR MEASURING DOSE AND ENERGY OF ION IMPLANTATION BY EMPLOYING REFLECTIVE OPTICS

This invention discloses an apparatus for measuring an ion-implantation ion energy and/or dosage. The apparatus includes a scanning densitometer for measuring a reflected light from a monitor substrate. The apparatus further uses a monitor substrate. A thin film is supported on the monitor substrate wherein the thin film has an optical characteristic that is sensitive to the ion-implantation. The apparatus further includes a light source for projecting a measuring beam onto the monitor substrate for generating a reflected light. The apparatus also includes a bare silicon substrate for measuring a full scale reflected light represented by I0 reflected from the bare silicon substrate with the light source projecting a full scale light onto the bare silicon substrate. The apparatus further has a light source control means for controlling the light source to project the full scale light onto a plurality of points on the monitor substrate before and after an ion implantation for obtaining reflection intensities I′ and I″. The apparatus further includes an ion-implantation measurement controller for controlling the apparatus and for calculating the implantation energy and/or dosage from the reflected light from the monitor substrate and displaying implant profile data.