Patent №
US 6,909,976
Granted
2005-06-21
Filed 2002
Owner
SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER
Lab
—
AI components
1
planning
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
10231117
A threshold voltage model with an impurity concentration profile in a channel direction taken into account is provided in the pocket implant MOSFET. With penetration length of the implanted pocket in the channel direction and the maximum impurity concentration of the implant pocket used as physical parameters, the threshold voltage model is obtained by linearly approximating the profile in the channel direction. By analytically solving the model by using a new threshold condition with inhomogeneous profile taken into account, the threshold voltage can be accurately obtained. Based on thus obtained model, the threshold voltage can be predicted and can be used for circuit design.
AI classification
Ownership
SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER
assignment · 132440047
Assignors
KITAMARU, DAISUKE, MIURA, MICHIKO
On an employer assignment, the assignors are typically the inventors.