Patent №
US 6,965,522
Granted
2005-11-15
Filed 2004
Owner
MACRONIX INTERNATIONAL CO., LTD.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
10802333
A tunneling diode magnetic junction memory that eliminates the need for a separate semiconductor diode is disclosed. The diode is formed by an insulating layer that is located between a free magnetic layer and a pinned magnetic layer. The present invention further discloses a method of reading the contents of a memory cell in a bi-directional manner in order to extend a storage life of the memory cell.
AI classification
AI hardware0.64
Knowledge representation0.01
Evolutionary computation0.00
Natural language0.00
Planning0.00
Machine learning0.00
Speech0.00
Vision0.00
Ownership
MACRONIX INTERNATIONAL CO., LTD.
assignment · 151040271
Assignors
LUNG, HSIANG-LAN, LIU, RUICHEN
On an employer assignment, the assignors are typically the inventors.
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