CMOS PROCESS COMPATIBLE, TUNABLE NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE AND METHOD OF OPERATING SAME
Patent №
US 6,972,465
Granted
2005-12-06
Filed 2004
Owner
—
Lab
—
AI components
1
hardware
Assignment
None on record
Dataset
AIPD
2023_r1 edition
Application
10760090
A CMOS based n-channel metal-insulator-semiconductor field-effect transistor (MISFET) that exhibits a useful negative differential resistance effect is disclosed. The resulting device can be incorporated into a number of useful applications, including as part of a memory device, a logic device, etc.
AI hardwareH10D 64/035B82Y 10/00G11C 5/142G11C 11/39H10D 30/60H10D 30/68H10D 30/681H10D 30/69+3 more
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