HIGH DENSITY MRAM USING THERMAL WRITING

A memory cell includes a magnetic cell junction having an antiferromagnetic layer within a portion of the cell junction that is adapted to characterize a logic state of a bit written to the junction. More specifically, a memory cell includes, an antiferromagnetic layer arranged in contact with an adjacent magnetic layer within a storing portion of a magnetic cell junction. Such a magnetic cell junction configuration and a method for programming a memory cell with such a cell junction configuration may be used to improve the write selectivity of a memory cell array and reduce the amount of current needed to write a bit to a memory cell. Moreover, a memory cell includes a magnetic cell junction having an aspect ratio less than 1.6. In addition, a memory cell includes at least two resistors.