Patent №
US 6,992,369
Granted
2006-01-31
Filed 2003
Owner
OVONYX, INC.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
10681781
A programmable resistance memory element comprising a dielectric material between a programmable resistance memory material and a threshold switching material.
AI classification
AI hardware1.00
Machine learning0.00
Evolutionary computation0.00
Knowledge representation0.00
Natural language0.00
Vision0.00
Speech0.00
Planning0.00
Ownership
OVONYX, INC.
assignment · 151550914
Assignors
KOSTYLEV, SERGEY A., CZUBATYJ, WOLODYMYR
On an employer assignment, the assignors are typically the inventors.
From the same owner
MEMORY DEVICE WITH LOW RESET CURRENTUS 9,000,408 · 2015MEMORY DEVICEUS 8,344,348 · 2013THIN FILM INPUT/OUTPUTUS 8,228,719 · 2012METHOD FOR THIN FILM MEMORYUS 8,198,158 · 2012METHOD AND APPARATUS FOR ACCESSING A BIDIRECTIONAL MEMORYUS 8,194,433 · 2012THIN FILM LOGIC CIRCUITRYUS 8,053,753 · 2011PROGRAMMABLE RESISTANCE MEMORYUS 8,009,455 · 2011IMMUNITY OF PHASE CHANGE MATERIAL TO DISTURB IN THE AMORPHOUS PHASEUS 7,990,761 · 2011