Patent №
US 7,009,903
Granted
2006-03-07
Filed 2004
Owner
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
10855042
A sense amplifying magnetic tunnel (SAMT) device is disclosed. In a particular embodiment, a field effect transistor (FET) having a drain, a source, a channel therebetween, a gate electrode and a tunneling gate oxide proximate to the channel is provided. In addition, a spin valve memory (SVM) cell is provided electrically coupled to the gate electrode. The electrical coupling between the SVM cell and the gate electrode serves to provide a control potential to the gate. In addition, the coupling provides a gain to a current passed through the SAMT device.
AI classification
Ownership
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
assignment · 154160611
Assignors
PERNER, FREDERICK A., SHARMA, MANISH
On an employer assignment, the assignors are typically the inventors.