SEMICONDUCTOR VARACTOR WITH REDUCED PARASITIC RESISTANCE

Patent №

US 7,053,465

Granted

2006-05-30

Filed 2001

Owner

TEXAS INSTRUMENTS INCORPORATED

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

09994421

A semiconductor varactor with reduced parasitic resistance. A contact isolation structure (32) is formed in a well region (20). The gate contact structures (70) are formed above the contact isolation structure (32) reducing the parasitic resistance. In addition, contact structures are formed on the gate layer (50) over the well regions (20) is a further embodiment to reduce the parasitic resistance.

AI hardwareH10D 84/215H10D 1/66

AI classification

AI hardware0.54
Natural language0.02
Machine learning0.00
Evolutionary computation0.00
Speech0.00
Knowledge representation0.00
Vision0.00
Planning0.00

Ownership

TEXAS INSTRUMENTS INCORPORATED

assignment · 123290566

Assignors

BENAISSA, KAMEL, SHEN, CHI-CHEONG

On an employer assignment, the assignors are typically the inventors.

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