SILICON ON INSULATOR (SOI) NEGATIVE DIFFERENTIAL RESISTANCE (NDR) BASED MEMORY DEVICE WITH REDUCED BODY EFFECTS
Patent №
US 7,187,028
Granted
2007-03-06
Filed 2005
Owner
SYNOPSYS, INC.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
11035786
A silicon-on-insulator (SOI) memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs.
AI classification
AI hardware0.64
Machine learning0.04
Natural language0.00
Evolutionary computation0.00
Speech0.00
Knowledge representation0.00
Vision0.00
Planning0.00
Ownership
SYNOPSYS, INC.
assignment · 188370769
From the same owner
DECONVOLUTION BY CONVOLUTIONSUS 12,619,862 · 2026EFFICIENT LOOK-UP TABLE BASED FUNCTIONS FOR ARTIFICIAL INTELLIGENCE (AI) ACCELERATORUS 12,619,864 · 2026LOGIC VERIFICATION OF SUPERCONDUCTING ELECTRONIC CIRCUITS, INCLUDING FOR MARGIN ANALYSIS OF YIELDUS 12,608,524 · 2026Machine-Learning Model for Circuit Design Requirements VerificationUS 12,596,858 · 2026MACHINE LEARNING TECHNIQUE TO DIAGNOSE SOFTWARE CRASHESUS 12,585,528 · 2026MEMORY ADDRESS CACHING FOR NEURAL NETWORKSUS 12,511,237 · 2025ADIABATIC QUANTUM-FLUX-PARAMETRON PLACEMENTUS 12,493,732 · 2025MACHINE-LEARNING-BASED POWER/GROUND (P/G) VIA REMOVALUS 12,475,295 · 2025