Patent №
US 7,196,882
Granted
2007-03-27
Filed 2002
Owner
MICRON TECHNOLOGY, INC.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
10200512
The present invention provides a magnetic tunnel junction memory element comprising two pinned ferromagnetic layers having magnetic orientations pointing in opposite directions and a sense layer arranged between the two pinned ferromagnetic layers and separated from each by a nonmagnetic tunnel barrier layer. The invention also provides methods of fabricating magnetic tunnel junction memory elements as well as magnetoresistive memory devices and processor systems comprising such memory elements.
AI classification
Ownership
MICRON TECHNOLOGY, INC.
assignment · 131360922
Assignors
DEAK, JAMES G.
On an employer assignment, the assignors are typically the inventors.