METHOD OF REFRESHING CHARGE-TRAPPING NON-VOLATILE MEMORY USING BAND-TO-BAND TUNNELING HOT HOLE (BTBTHH) INJECTION
Patent №
US 7,218,554
Granted
2007-05-15
Filed 2005
Owner
MACRONIX INTERNATIONAL CO., LTD.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
11160097
A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.
AI classification
AI hardware0.98
Evolutionary computation0.01
Natural language0.00
Knowledge representation0.00
Machine learning0.00
Speech0.00
Planning0.00
Vision0.00
Ownership
MACRONIX INTERNATIONAL CO., LTD.
assignment · 161090782
Assignors
HSU, CHENG-HSING, WU, CHAO-I, LIEN, HAO-MING, HSUEH, MING-HSIANG
On an employer assignment, the assignors are typically the inventors.
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