METHOD AND APPARATUS FOR CORRECTING 3D MASK EFFECTS

Patent №

US 7,308,673

Granted

2007-12-11

Filed 2005

Owner

SYNOPSYS, INC.

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

11033415

One embodiment of the present invention provides a system that improves lithography performance by correcting for 3D mask effects. During operation the system receives a mask layout that contains etched regions, called shifters, which can have a phase shift relative to other regions. Next, the system chooses a shifter in the mask layout. The system then corrects for 3D mask effects by, iteratively, (a) selecting a region within the shifter, (b) adjusting the phase shift of the selected region in a simulation model to account for 3D mask effects, and (c) modifying the shape of the shifter based on the difference between a desired pattern and a simulated pattern generated using the simulation model.

AI hardwareG03F 1/34G03F 1/28G03F 1/36

AI classification

AI hardware0.69
Planning0.14
Knowledge representation0.00
Natural language0.00
Machine learning0.00
Evolutionary computation0.00
Vision0.00
Speech0.00

Ownership

SYNOPSYS, INC.

assignment · 161590468

Assignors

MELVIN, LAWRENCE S. III., YAN, QILIANG, SHIELY, JAMES P.

On an employer assignment, the assignors are typically the inventors.

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