SYSTEM AND METHOD FOR MEASURING THIN FILM THICKNESS VARIATIONS AND FOR COMPENSATING FOR THE VARIATIONS
Patent №
US 7,315,642
Granted
2008-01-01
Filed 2004
Owner
APPLIED MATERIALS, ISRAEL, LTD.
Lab
—
AI components
1
vision
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
10778664
A method for measuring thin film thickness variations of inspected wafer that includes an upper non-opaque thin film. The method including (i) scanning the wafer and obtain wafer image that includes die images each of which composed of pixels, (ii) identifying regions in a first die image and obtain first intensity measurements of the respective regions, (iii) identifying corresponding regions in a second die image and obtain second intensity measurements of the respective regions, (iv) processing the first intensity measurements and the second intensity measurements to obtain signal variations between the second intensity measurements and the first intensity measurements, whereby each calculated signal variation is indicative of thickness variation between a region in the second die and a corresponding region in the first die.
AI classification
Ownership
APPLIED MATERIALS, ISRAEL, LTD.
assignment · 168790076
Assignors
BARTOV, AVISHAY
On an employer assignment, the assignors are typically the inventors.