IMAGE SENSOR HAVING IMPROVED SENSITIVITY AND METHOD OF MANUFACTURING THE SAME

In an image sensor in which a vertical length from a photoelectric conversion element to an uppermost micro-lens is minimal, and a method of manufacturing the same, the image sensor includes a substrate, a plurality of photoelectric conversion elements, and first to n-level (where n is an integer greater than or equal to 2) metal wires. In the substrate, a sensor region and a peripheral circuit region are defined. The plurality of photoelectric conversion elements are formed in or on the substrate within the sensor region. The first to n-level metal wires are sequentially formed on the substrate. The n-level metal wires within the sensor region are of a thickness that is less than the n-level metal wires within the peripheral circuit region.