ULTRA HIGH DENSITY PHASE CHANGE MEMORY HAVING IMPROVED EMITTER CONTACTS, IMPROVED GST CELL RELIABILITY AND HIGHLY MATCHED UHD GST CELLS USING COLUMN MICRO-TRENCH STRIPS
Patent №
US 7,745,809
Granted
2010-06-29
Filed 2008
Owner
MARVELL SEMICONDUCTOR, INC.
+1 more
Lab
—
AI components
1
nlp
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
12062444
Embodiments of the present invention provide an apparatus comprising a substrate comprising an emitter layer and at least one emitter interface adjacent to the emitter layer, and a metal protective layer on a top surface of the at least one emitter interface. A method of manufacturing such an apparatus is also disclosed. The method may include performing plasma nitridation directed at column micro-trench strips. Other embodiments are also described.
AI classification
Ownership
MARVELL SEMICONDUCTOR, INC.
assignment · 207540300
MARVELL INTERNATIONAL LTD.
assignment · 207540309
Assignors
SUTARDJA, PANTAS, WU, ALBERT, WEI, CHIEN-CHUAN, CHANG, RUNZI, LEE, WINSTON, LEE, PETER
On an employer assignment, the assignors are typically the inventors.