THERMALLY ASSISTED MAGNETIC WRITE MEMORY

A thermally assisted magnetic write memory including of memory points or memory cells, each of which includes a double magnetic tunnel junction separated from one another by a layer made from an antiferromagnetic material, and whereof the stacking order of the layers constituting them is reversed with regard to one another. Each of the magnetic tunnel junctions includes a reference layer, a storage layer, an insulating layer inserted between the reference and storage layers, constituting the tunnel barrier of the magnetic tunnel junction concerned. The blocking temperature of the layer is lower than the blocking temperature of the reference layer of the corresponding magnetic tunnel junction. The product RA resistance×area of the two tunnel barriers is different. Each memory point a way to heat the storage layers to a temperature above the blocking temperature of the layers.