NON-VOLATILE ELECTROMECHANICAL FIELD EFFECT DEVICES AND CIRCUITS USING SAME AND METHODS OF FORMING SAME

Patent №

US 7,928,523

Granted

2011-04-19

Filed 2009

Owner

NANTERO, INC.

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

12512428

Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.

AI hardwareH10D 30/60B82Y 10/00G11C 7/065G11C 13/025G11C 17/16G11C 17/165G11C 23/00H01H 1/0094+23 more

AI classification

AI hardware1.00
Machine learning0.00
Natural language0.00
Planning0.00
Vision0.00
Evolutionary computation0.00
Speech0.00
Knowledge representation0.00

Ownership

NANTERO, INC.

assignment · 255330440

Assignors

BERTIN, CLAUDE L., RUECKES, THOMAS, SEGAL, BRENT M., VOGELI, BERNHARD, BROCK, DARREN K., JAIPRAKASH, VENKATACHALAM C.

On an employer assignment, the assignors are typically the inventors.

© 2026 NYSGPT2525 LLC