A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A MEMORY DEVICE COMPRISING AN INSULATOR MIXTURE REGION IN A CONDUCTIVE LAYER
Patent №
US 8,288,197
Granted
2012-10-16
Filed 2007
Owner
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
11918960
It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.
AI classification
Ownership
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
assignment · 200500212
Assignors
YUKAWA, MIKIO, OHSAWA, NOBUHARU, ASAMI, YOSHINOBU, KAWAMATA, IKUKO, YAMAZAKI, SHUNPEI
On an employer assignment, the assignors are typically the inventors.