METHOD FOR MODIFICATION OF BUILT IN POTENTIAL OF DIODES

Patent №

US 8,330,192

Granted

2012-12-11

Filed 2007

Owner

BOREALIS TECHNICAL LIMITED

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

11883011

In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.

AI hardwareH10D 8/00H10D 8/60H10F 77/148H10H 20/821Y02E 10/50

AI classification

AI hardware0.99
Natural language0.00
Vision0.00
Evolutionary computation0.00
Knowledge representation0.00
Machine learning0.00
Speech0.00
Planning0.00

Ownership

BOREALIS TECHNICAL LIMITED

assignment · 358730314

From the same owner

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