TEMPERATURE CONTROL METHOD, METHOD OF OBTAINING A TEMPERATURE CORRECTION VALUE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE TREATMENT APPARATUS

In a temperature control method in which a target temperature is given in a thermal treatment furnace and plural heaters are controlled according to the target temperature, the correlation of the each heater and plural profile temperature sensors provided in the thermal treatment furnace is determined, a virtual temperature is calculated on the basis of the detection temperature of each profile temperature sensor and a weighting factor calculated from the correlation, and the each heater is controlled so that the virtual temperature is coincident with the target temperature.