SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGING DEVICE

A semiconductor element includes a base-body region of p-type; a charge-generation buried region of a n-type, implementing a photodiode together with the base-body region, configured to create a first potential valley in the base-body region; an accumulation region of n-type, being buried in a part of the upper portion of the base-body region, configured to create a second potential valley deeper than the first potential valley; a transfer-gate insulation film provided on a surface of the base-body region; a transfer-gate electrode provided on the transfer-gate insulation film, configured to control a potential of a transfer channel formed in the base-body region between the charge-generation buried region and the accumulation region; and a recessed-potential creation mechanism configured to create a stair-like-shaped potential barrier for electronic shuttering.