Crystalline Silicon-Based Memristive Device with Multiple Mobile Dopant Species

A memristive device includes a first and a second electrode; a silicon memristive matrix interposed between the first electrode and the second electrode; and a mobile dopant species within the silicon memristive matrix which moves in response to a programming electrical field and remains substantially in place after the removal of the programming electrical field. A method for using a crossbar architecture containing a silicon memristive matrix includes: applying a programming electrical field by applying a voltage bias across a first conductor and a second conductor; a silicon memristive matrix containing mobile dopants being interposed between the first conductor and the second conductor, the programming voltage repositioning the mobile dopants within the silicon memristive matrix; and reading a state of the silicon memristive matrix by applying a reading energy across the silicon memristive matrix, the reading energy producing a measurable indication of the state of the silicon memristive matrix.