FIELD-EFFECT TRANSISTOR, SINGLE-ELECTRON TRANSISTOR AND SENSOR USING THE SAME

Patent №

US 9,506,892

Granted

2016-11-29

Filed 2014

Owner

JAPAN SCIENCE AND TECHNOLOGY AGENCY

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

14302842

A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided.It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5;

AI hardwareG01N 27/4145B82Y 10/00B82Y 30/00G01N 27/4146H10D 30/402H10D 62/123H10D 64/514

AI classification

AI hardware0.96
Planning0.01
Knowledge representation0.01
Machine learning0.01
Vision0.00
Natural language0.00
Speech0.00
Evolutionary computation0.00

Ownership

JAPAN SCIENCE AND TECHNOLOGY AGENCY

assignment · 351170171

Assignors

MATSUMOTO, KAZUHIKO, KOJIMA, ATSUHIKO, NAGAO, SATORU, KATOU, MASANORI, YAMADA, YUTAKA, NAGAIKE, KAZUHIRO, IFUKU, YASUO, MITANI, HIROSHI

On an employer assignment, the assignors are typically the inventors.

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