METHOD FOR CLEANING BASE, HEAT PROCESS METHOD FOR SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE CAPTURING APPARATUS
Patent №
US 9,508,571
Granted
2016-11-29
Filed 2015
Owner
CANON KABUSHIKI KAISHA
Lab
—
AI components
1
planning
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
14701122
A method for cleaning a base for supporting an object to process in an apparatus configured to perform a heat process, the method comprising a first step of forming an oxide film on the base including silicon carbide, by subjecting the base to a heat process in a gas atmosphere including oxygen, and a second step of, after the first step, subjecting the base to a heat process in a gas atmosphere including steam, wherein the first step is performed for 10 hours at a temperature of 1000° C. or more.
AI classification
Ownership
CANON KABUSHIKI KAISHA
assignment · 361800169
Assignors
OGAWA, TOSHIYUKI, UKIGAYA, NOBUTAKA
On an employer assignment, the assignors are typically the inventors.