EMITTER CONTACT EPITAXIAL STRUCTURE AND OHMIC CONTACT FORMATION FOR HETEROJUNCTION BIPOLAR TRANSISTOR

Patent №

US 9,608,084

Granted

2017-03-28

Filed 2015

Owner

QORVO US, INC.

Lab

AI components

1

hardware

Assignment

Recorded

Dataset

AIPD

2023_r1 edition

Application

14926889

Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device includes a diffusion control layer as part of an emitter epitaxial structure. The IC device may utilize a common metallization scheme to simultaneously form an emitter contact and a base contact. Other embodiments may also be described and/or claimed.

AI hardwareH10D 10/021H10D 10/80H10D 10/821H10D 62/136H10D 62/85H10D 62/852H10D 64/231H10D 64/281+2 more

AI classification

AI hardware0.61
Knowledge representation0.00
Speech0.00
Machine learning0.00
Evolutionary computation0.00
Natural language0.00
Planning0.00
Vision0.00

Ownership

QORVO US, INC.

assignment · 391100607

Assignors

HENDERSON, TIMOTHY S., HURTT, SHEILA K.

On an employer assignment, the assignors are typically the inventors.

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