EMITTER CONTACT EPITAXIAL STRUCTURE AND OHMIC CONTACT FORMATION FOR HETEROJUNCTION BIPOLAR TRANSISTOR
Patent №
US 9,608,084
Granted
2017-03-28
Filed 2015
Owner
QORVO US, INC.
Lab
—
AI components
1
hardware
Assignment
Recorded
Dataset
AIPD
2023_r1 edition
Application
14926889
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device includes a diffusion control layer as part of an emitter epitaxial structure. The IC device may utilize a common metallization scheme to simultaneously form an emitter contact and a base contact. Other embodiments may also be described and/or claimed.
AI classification
Ownership
QORVO US, INC.
assignment · 391100607
Assignors
HENDERSON, TIMOTHY S., HURTT, SHEILA K.
On an employer assignment, the assignors are typically the inventors.