APPARATUS AND METHOD FOR PRECONDITIONING CURRENTS TO REDUCE ERRORS IN SENSING FOR NON-VOLATILE MEMORY

Reduced errors when sensing non-volatile memory are provided by applying a current spike or preconditioning current for a group of memory cells included a selected cell. During a sense operation, a preconditioning current can be passed through a group of non-volatile memory cells. The preconditioning current is provided prior to applying at least one reference voltage to a selected word line. The preconditioning current may simulate a cell current passing through the channel during a verification phase of programming. The preconditioning current can modify a channel resistance to approximate a state during verification to provide a more stable threshold voltage for the memory cells. Preconditioning currents may be applied selectively for select reference levels, select pages, and/or select operations. Selective application of preconditioning currents based on temperature is also provided.